Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires

被引：164

作者：

Dubrovskii, V. G. ^{[1
,2
]}

Sibirev, N. V. ^{[1
]}

Cirlin, G. E. ^{[1
,2
]}

Soshnikov, I. P. ^{[1
,2
]}

Chen, W. H. ^{[3
,4
]}

Larde, R. ^{[3
,4
]}

Cadel, E. ^{[3
,4
]}

Pareige, P. ^{[3
,4
]}

Xu, T. ^{[5
]}

Grandidier, B. ^{[5
]}

Nys, J. -P. ^{[5
]}

Stievenard, D. ^{[5
]}

Moewe, M. ^{[6
]}

Chuang, L. C. ^{[6
]}

Chang-Hasnain, C. ^{[6
]}

机构：

[1] Russian Acad Sci, St Petersburg Phys & Technol Ctr Res & Educ, St Petersburg 194021, Russia

[2] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[3] Univ Rouen, CNRS, UMR 6634, F-76801 St Etienne, France

[4] INSA Rouen, CNRS, UMR 6634, F-76801 St Etienne, France

[5] IEMN, CNRS, Dept ISEN, UMR 8520, F-59046 Lille, France

[6] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

PHYSICAL REVIEW B | 2009年 / 79卷 / 20期

基金：

俄罗斯基础研究基金会;

关键词：

elemental semiconductors; gallium arsenide; III-V semiconductors; indium compounds; MOCVD; molecular beam epitaxial growth; nanowires; semiconductor growth; silicon; surface diffusion; LIQUID-SOLID MECHANISM; MOLECULAR-BEAM EPITAXY; SURFACE-DIFFUSION;

D O I：

10.1103/PhysRevB.79.205316

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a general model for the vapor-liquid-solid nanowire (NW) growth rates which accounts for adatom diffusion from the substrate and sidewalls into the Au catalyst drop as well as the Gibbs-Thomson effect of elevated chemical potential in the drop with a curved surface. The growth model is compared with the experimental length-diameter dependences for InP and Si NWs grown via metal organic chemical vapor deposition (MOCVD) and GaAs nanowires grown via molecular beam epitaxy (MBE). We show that MBE growth is affected mainly by adatom diffusion from the substrate, whereas MOCVD growth is affected mainly by direct Au drop impingement and sidewall diffusion. The Gibbs-Thomson effect is shown to limit growth for smaller diameter nanowires. Fits for diffusion lengths and the Gibbs-Thomson radii are determined which explain the experimental length-diameter dependence observed.

引用

页数：7

共 29 条

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