A zinc-oxide thin-film transistor using a spun-on dielectric and gate electrode

被引：8

作者：

Kwon, Jae-Hong ^{[2
]}

Seo, Jung-Hoon ^{[3
]}

Shin, Sang-Il ^{[2
]}

Ju, Byeong-Kwon ^{[1
]}

机构：

[1] Korea Univ, Coll Engn, Sch Elect Engn, Seoul 136713, South Korea

[2] Korea Univ, Coll Engn, Display & Nanosyst Lab, Seoul 136713, South Korea

[3] Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2009年 / 42卷 / 06期

基金：

新加坡国家研究基金会;

关键词：

TRANSPARENT; FABRICATION; RESISTANCE; PROGRESS; DEVICE; SENSOR;

D O I：

10.1088/0022-3727/42/6/065105

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper presents an organic-inorganic hybrid transparent thin-film transistor (TTFT) with an active channel of zinc-oxide (ZnO). The solution-processed stagger type device consists of methyl-siloxane-based spin-on glass (SOG) and poly(3,4-ethylenedioxythiophene) : poly( styrenesulfonate) (PEDOT : PSS) for the dielectric and gate electrode, respectively. The TTFT, fabricated by this method, has an optical transmittance of 67.4%, and it displays a field effect mobility of 20.65 cm(2) V-1 s(-1), an on/off ratio of > 10(4), a threshold voltage of 6.9 V and a subthreshold swing of 1.02 V/decade when the drain voltage (VDS) is 20 V.

引用

页数：6

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