Effects of substrate offset angles on MBE growth of ZnO

被引：29

作者：

Sakurai, K ^{[1
]}

Kanehiro, M

Nakahara, K

Tanabe, T

Fujita, S

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6068501, Japan

[2] Rohm Co Ltd, Opt Device Res & Dev Div, Kyoto 6158585, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 214卷

关键词：

offset angle; growth direction; ZnO; MBE; sapphire substrate;

D O I：

10.1016/S0022-0248(00)00073-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Effects of sapphire substrate offset angle on MBE growth of ZnO films were investigated. Twin crystal RHEED patterns and surface facetting observed with c-plane just-oriented substrates were suppressed by enlarging the offset angles from near-zero to 2.87 degrees. Improvement in FWHM of XRC and surface morphology was observed with larger offset angles. indicating that the offset angle also is a sensitive factor for ZnO film growth. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：92 / 94

页数：3

共 3 条

[1] Growth of high-quality epitaxial ZnO films on α-Al2O3 [J].

Fons, P ;

Iwata, K ;

Niki, S ;

Yamada, A ;

Matsubara, K .

JOURNAL OF CRYSTAL GROWTH, 1999, 201 :627-632

[2] Determination of surface polarity of c-axis oriented ZnO films by coaxial impact-collision ion scattering spectroscopy [J].

Ohnishi, T ;

Ohtomo, A ;

Kawasaki, M ;

Takahashi, K ;

Yoshimoto, M ;

Koinuma, H .

APPLIED PHYSICS LETTERS, 1998, 72 (07) :824-826

[3] Effects of oxygen plasma condition on MBE growth of ZnO [J].

Sakurai, K ;

Kanehiro, M ;

Nakahara, K ;

Tanabe, T ;

Fujita, S ;

Fujita, S .

JOURNAL OF CRYSTAL GROWTH, 2000, 209 (2-3) :522-525

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