Unraveling the Jahn-Teller effect in Mn-doped GaN using the Heyd-Scuseria-Ernzerhof hybrid functional

被引:121
作者
Stroppa, A. [1 ]
Kresse, G.
机构
[1] Univ Vienna, Fac Phys, A-1090 Vienna, Austria
关键词
ab initio calculations; Fermi level; gallium compounds; ground states; III-V semiconductors; Jahn-Teller effect; manganese; semiconductor doping; wide band gap semiconductors; ELECTRONIC-STRUCTURE; 1ST-PRINCIPLES CALCULATIONS; DENSITY FUNCTIONALS; ACCEPTOR LEVEL; HARTREE-FOCK; IMPURITIES; EXCHANGE; WURTZITE; DEFECTS; ENERGY;
D O I
10.1103/PhysRevB.79.201201
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present an ab-initio study of the Mn substitution for Ga in GaN using the Heyd-Scuseria-Ernzerhof hybrid functional. Contrary to semilocal functionals, the majority Mn t(2) manifold splits into an occupied doublet and an unoccupied singlet well above the Fermi level resulting in an insulating ground state, which is further stabilized by a sizeable Jahn-Teller distortion. The predictions are confirmed using GW calculations and are in agreement with experiment. A transition from a localized to a delocalized Mn hole state is predicted from GaN to GaAs.
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页数:4
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