Exploring Local Electrostatic Effects with Scanning Probe Microscopy: Implications for Piezoresponse Force Microscopy and Triboelectricity

被引:126
作者
Balke, Nina [1 ]
Maksymovych, Petro [1 ]
Jesse, Stephen [1 ]
Kravchenko, Ivan I. [1 ]
Li, Qian [1 ]
Kalinin, Sergei V. [1 ]
机构
[1] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Rige, TN 37831 USA
关键词
scanning probe microscopy; electrostatics; charge storage; HfO2; thin films;
D O I
10.1021/nn505176a
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The implementation of contact mode Kelvin probe force microscopy (cKPFM) utilizes the electrostatic interactions between tip and sample when the tip and sample are in contact with each other. Surprisingly, the electrostatic forces in contact are large enough to be measured even with tips as stiff as 4.5 N/m. As for traditional noncontact KPFM, the signal depends strongly on electrical properties of the sample, such as the dielectric constant, and the tip properties, such as the stiffness. Since the tip is in contact with the sample, bias-induced changes in the junction potential between tip and sample can be measured with higher lateral and temporal resolution compared to traditional noncontact KPFM. Significant and reproducible variations of tip-surface capacitance are observed and attributed to surface electrochemical phenomena. Observations of significant surface charge states at zero bias and strong hysteretic electromechanical responses at a nonferroelectric surface have significant implications for fields such as triboelectricity and piezoresponse force microscopy.
引用
收藏
页码:10229 / 10236
页数:8
相关论文
共 28 条
[21]   ACOUSTIC MICROSCOPY BY ATOMIC-FORCE MICROSCOPY [J].
RABE, U ;
ARNOLD, W .
APPLIED PHYSICS LETTERS, 1994, 64 (12) :1493-1495
[22]   Quantitative determination of contact stiffness using atomic force acoustic microscopy [J].
Rabe, U ;
Amelio, S ;
Kester, E ;
Scherer, V ;
Hirsekorn, S ;
Arnold, W .
ULTRASONICS, 2000, 38 (1-8) :430-437
[23]  
Sadewasser S, 2012, KELVIN PROBE FORCE M
[24]   Kelvin probe force microscopy without bias-voltage feedback [J].
Takeuchi, Osamu ;
Ohrai, Yoshihisa ;
Yoshida, Shoji ;
Shigekawa, Hidemi .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (8B) :5626-5630
[25]   Nanoionics-based resistive switching memories [J].
Waser, RaineR ;
Aono, Masakazu .
NATURE MATERIALS, 2007, 6 (11) :833-840
[26]   The mechanism of electroforming of metal oxide memristive switches [J].
Yang, J. Joshua ;
Miao, Feng ;
Pickett, Matthew D. ;
Ohlberg, Douglas A. A. ;
Stewart, Duncan R. ;
Lau, Chun Ning ;
Williams, R. Stanley .
NANOTECHNOLOGY, 2009, 20 (21)
[27]   Wake-up effects in Si-doped hafnium oxide ferroelectric thin films [J].
Zhou, Dayu ;
Xu, Jin ;
Li, Qing ;
Guan, Yan ;
Cao, Fei ;
Dong, Xianlin ;
Mueller, Johannes ;
Schenk, Tony ;
Schroeder, Uwe .
APPLIED PHYSICS LETTERS, 2013, 103 (19)
[28]   Charge trapping in ultrathin hafnium oxide [J].
Zhu, WJ ;
Ma, TP ;
Zafar, S ;
Tamagawa, T .
IEEE ELECTRON DEVICE LETTERS, 2002, 23 (10) :597-599