Weakly bound carbon-hydrogen complex in silicon

被引:15
作者
Lavrov, EV [1 ]
Hoffmann, L
Bech Nielsen, B
Hourahine, B
Jones, R
Öberg, S
Briddon, PR
机构
[1] Aarhus Univ, Inst Phys & Astron, DK-8000 Aarhus C, Denmark
[2] Univ Exeter, Dept Phys, Exeter EX4 4QL, Devon, England
[3] Lulea Univ Technol, Dept Math, S-95187 Lulea, Sweden
[4] Univ Newcastle Upon Tyne, Dept Phys, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England
关键词
D O I
10.1103/PhysRevB.61.16659
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Local vibrational modes of a weakly bound carbon-hydrogen complex in silicon have been identified with infrared-absorption spectroscopy. After implantation of protons at similar to 20 K and subsequent annealing at 180 K, two carbon modes at 596 and 661 cm(-1), and one hydrogen mode at 1885 cm(-1) are observed. The three modes originate from the same complex, which is identified as bond-centered hydrogen in the vicinity of a nearby substitutional carbon atom. Ab initio theory has been applied to calculate the structure and local modes of carbon-hydrogen complexes with hydrogen located at the first, second, and third nearest bond-center site to substitutional carbon. The results support our assignment.
引用
收藏
页码:16659 / 16666
页数:8
相关论文
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