Contact resistance in few and multilayer graphene devices

被引：252

作者：

Venugopal, A. ^{[1
]}

Colombo, L. ^{[2
]}

Vogel, E. M. ^{[1
,3
]}

机构：

[1] Univ Texas Dallas, Dept Elect Engn, Richardson, TX 75080 USA

[2] Texas Instruments Inc, Dallas, TX 75243 USA

[3] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 01期

关键词：

contact resistance; field effect transistors; graphene; multilayers; nickel; FILMS; GRAPHITE; CARBON;

D O I：

10.1063/1.3290248

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The contact resistance of metals on backgated graphene field-effect transistors is studied. The residual resistance obtained at high backgate voltage is found to be in excellent agreement with the extracted values of contact resistance from transfer length measurements on graphene flakes. The contact resistance is found to be a significant contributor to the total resistance of graphene-based devices. The specific contact resistance is shown to be independent of the applied backgate voltage and the number of graphene layers.

引用

页数：3

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