Stability of deep centers in 4H-SiC epitaxial layers during thermal annealing

被引：44

作者：

Negoro, Y ^{[1
]}

Kimoto, T ^{[1
]}

Matsunami, H ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Nishikyo Ku, Kyoto 6158510, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 10期

关键词：

D O I：

10.1063/1.1790032

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

N-type epitaxial 4H-SiC layers grown by hot-wall chemical vapor deposition were investigated with regard to deep centers by capacitance-voltage measurements and deep level transient spectroscopy (DLTS). The DLTS spectra revealed that the concentrations of deep centers were reduced by one order of magnitude by annealing at 1700 degreesC, compared to those in an as-grown material. The Z(1/2) center with an energy level of 0.59+/-0.03 eV and the EH6/7 center with an energy level of 1.66+/-0.11 eV below the conduction band edge are annealed out at a temperature of 1700 degreesC or higher. (C) 2004 American Institute of Physics.

引用

页码：1716 / 1718

页数：3

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