Electric-field-induced migration of chemisorbed gas molecules on a sensitive film - a new chemical sensor

被引：98

作者：

Liess, M ^{[1
]}

机构：

[1] Tech Univ Berlin, Dept Elect Engn Microsensor & Microacuator Techno, D-13355 Berlin, Germany

来源：

THIN SOLID FILMS | 2002年 / 410卷 / 1-2期

关键词：

chemisorption; electromigration; indium oxide; sensors;

D O I：

10.1016/S0040-6090(02)00209-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of sputtered In,03 were exposed to a continuous flow of N-2, pure synthetic air and synthetic air contaminated with NO2, NH3 and H-2 while an electric field step function of 76 V/cm was applied. After the field parallel to the surface was switched on, large changes in the ratio between the film resistance close to the negative contact and the overall film resistance were observed. During the electric pulse different time-dependent behaviors were observed depending on the film ambient. This effect is attributed to migration phenomena on the surface and allows to build a new class of chemical sensors. It might, with this technology, be possible to distinguish different gases by means of the same sensitive film. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：183 / 187

页数：5

共 12 条

[1] OXYGEN IN CATALYSIS ON TRANSITION-METAL OXIDES [J].

BIELANSKI, A ;

HABER, J .

CATALYSIS REVIEWS-SCIENCE AND ENGINEERING, 1979, 19 (01) :1-41

[2] MAPPING OF MOBILE CHARGES ON INSULATOR SURFACES WITH THE ELECTROSTATIC FORCE MICROSCOPE [J].

DOMANSKY, K ;

LENG, Y ;

WILLIAMS, CC ;

JANATA, J ;

PETELENZ, D .

APPLIED PHYSICS LETTERS, 1993, 63 (11) :1513-1515

[3] REVERSIBLE CHANGES OF THE OPTICAL AND ELECTRICAL-PROPERTIES OF AMORPHOUS INOX BY PHOTOREDUCTION AND OXIDATION [J].

FRITZSCHE, H ;

PASHMAKOV, B ;

CLAFLIN, B .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1994, 32 (04) :383-393

[4] DOPANT MIGRATION IN CONDUCTING POLYMERS [J].

HOGERVORST, ACR .

SYNTHETIC METALS, 1994, 62 (01) :27-34

[5] Oxygen tracer diffusion in polycrystalline In2O3 [J].

Ikuma, Y ;

Murakami, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 143 (08) :2698-2702

[6]

LIESS M, 1994, THESIS TU BRAUNSCHWE

[7]

LIESS M, 2001, Patent No. 100412637

[8]

Papadopoulos CA, 1997, SENSOR MATER, V9, P75

[9] Fabrication parameters and NO2 sensitivity of reactively RF-sputtered In2O3 thin films [J].

Steffes, H ;

Imawan, C ;

Solzbacher, F ;

Obermeier, E .

SENSORS AND ACTUATORS B-CHEMICAL, 2000, 68 (1-3) :249-253

[10]

Strassler S., 1983, Sensors and Actuators, V4, P465, DOI 10.1016/0250-6874(83)85058-6

← 1 2 →