REVERSIBLE CHANGES OF THE OPTICAL AND ELECTRICAL-PROPERTIES OF AMORPHOUS INOX BY PHOTOREDUCTION AND OXIDATION

被引：38

作者：

FRITZSCHE, H ^{[1
]}

PASHMAKOV, B ^{[1
]}

CLAFLIN, B ^{[1
]}

机构：

[1] UNIV CHICAGO,DEPT PHYS,CHICAGO,IL 60637

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1994年 / 32卷 / 04期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0927-0248(94)90101-5

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The conductivity sigma of amorphous InO(x) films can be increased to more than 500 OMEGA-1 cm-1 by exposure to ultraviolet light. This occurs even at 100 K and in sealed samples, and is caused by photoreduction. The conductivity can be decreased to less than 10(-9) OMEGA-1 cm-1 at 300 K by reoxidizing the sample in ozone or an oxygen plasma. The conducting samples exhibit free carrier absorption below hnu = 0.2 eV and a Burstein shift of the optical absorption edge by about 0.4 eV. Photoreduction and oxidation can change the optical and electrical properties of one and the same film in a reproducible manner. The temperature dependence of the conductivity of different oxidation stages of a sample can be explained between 150 K and 300 K by conduction in the extended states of the amorphous semiconductor.

引用

页码：383 / 393

页数：11

共 15 条

[1] PRECISE MEASUREMENTS OF OXYGEN-CONTENT - OXYGEN VACANCIES IN TRANSPARENT CONDUCTING INDIUM OXIDE-FILMS [J].