Discontinuous tracks in arsenic-doped crystalline Si0.5Ge0.5 alloy layers -: art. no. 045316

被引：33

作者：

Gaiduk, PI

Larsen, AN

Trautmann, C

Toulemonde, M

机构：

[1] Aarhus Univ, Inst Phys & Astron, DK-8000 Aarhus C, Denmark

[2] GSI Darmstadt, D-64291 Darmstadt, Germany

[3] Ctr Interdisciplinaire Rech Ions Lourds, F-14070 Caen 5, France

来源：

PHYSICAL REVIEW B | 2002年 / 66卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.66.045316

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the observation of tracks in single-crystalline Si0.5Ge0.5 alloy layers irradiated with 1.3-GeV U ions in the electronic stopping-power regime. Transmission electron microscopy in both conventional and high-resolution mode reveals more or less discontinuous tracks depending on the composition of the Si1-xGex alloy and on the arsenic doping level. The morphology and the atomic structure of the tracks are analyzed. The results are discussed in the frame of the thermal-spike approach which assumes both track melting and imperfect crystallization.

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页码：453161 / 453165

页数：5

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