26.1% thin-film GaAs solar cell using epitaxial lift-off

被引：254

作者：

Bauhuis, G. J. ^{[1
]}

Mulder, P. ^{[1
]}

Haverkamp, E. J. ^{[1
]}

Huijben, J. C. C. M. ^{[1
]}

Schermer, J. J. ^{[1
]}

机构：

[1] Radboud Univ Nijmegen, Fac Sci, IMM, NL-6525 ED Nijmegen, Netherlands

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2009年 / 93卷 / 09期

关键词：

Thin film; III-V; N-GAAS; EFFICIENCY;

D O I：

10.1016/j.solmat.2009.03.027

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The epitaxial lift-off technique can be used to separate a III-V solar cell structure from its underlying GaAs substrate. Processing a thin-film cell is somewhat different from a regular cell on substrate, In this work a number of critical issues, e.g., a low-temperature anneal front contact and the metal mirror on backside of the thin-film are optimized. Together with an improved active layer material quality, grid mask and anti-reflection coating this leads to thin-film cells as good as cells on a substrate, with record efficiencies for single junction GaAs solar cells of 26.1% for both cell types. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1488 / 1491

页数：4

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