On the low resistance Au/Ge/Pd ohmic contact to n-GaAs

被引：34

作者：

Hao, PH

Wang, LC

Deng, F

Lau, SS

Cheng, JY

机构：

[1] UNIV CALIF SAN DIEGO,DEPT ELECT & COMP ENGN,LA JOLLA,CA 92093

[2] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 08期

关键词：

D O I：

10.1063/1.361788

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report that a Au/Ge/Pd layered structure can result in low contact resistivities (similar to 10(-6) Omega cm(2)) to n-GaAs processed in three temperature ranges (175-200, 340-350, and 425-450 degrees C). The contacts processed below the Au-Ge eutectic temperature (361 degrees C) show good surface and interface morphology, thermal stability, Au wire bondability, and reproducibility. The ohmic contact formation mechanisms are also presented. (C) 1996 American Institute of Physics.

引用

页码：4211 / 4215

页数：5

共 13 条

[1] HERBER HH, 1972, SOLID STATE ELECTRON, V15, P145
[2] LAU SS, 1978, THIN FILMS INTERDIFF, pCH12
[3] NONALLOYED OHMIC CONTACTS TO N-GAAS BY SOLID-PHASE EPITAXY OF GE
MARSHALL, ED
ZHANG, B
WANG, LC
JIAO, PF
CHEN, WX
SAWADA, T
LAU, SS
KAVANAGH, KL
KUECH, TF
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) : 942 - 947
[4] NON-ALLOYED OHMIC CONTACT TO NORMAL-GAAS BY SOLID-PHASE EPITAXY
MARSHALL, ED
CHEN, WX
WU, CS
LAU, SS
KUECH, TF
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (03) : 298 - 300
[5] GAAS-MESFETS WITH NONALLOYED OHMIC CONTACTS - TECHNOLOGY AND PERFORMANCE
PACCAGNELLA, A
CANALI, C
DONZELLI, G
ZANONI, E
WANG, LC
LAU, SS
[J]. ELECTRONICS LETTERS, 1988, 24 (11) : 708 - 709
[6] CONTACT DEGRADATION OF GAAS TRANSFERRED ELECTRON DEVICES
PALMSTROM, CJ
MORGAN, DV
HOWES, MJ
[J]. NUCLEAR INSTRUMENTS & METHODS, 1978, 150 (02): : 305 - 311
[7] SOLID-PHASE REGROWTH OF COMPOUND SEMICONDUCTORS BY REACTION-DRIVEN DECOMPOSITION OF INTERMEDIATE PHASES
SANDS, T
MARSHALL, ED
WANG, LC
[J]. JOURNAL OF MATERIALS RESEARCH, 1988, 3 (05) : 914 - 921
[8] EFFECTS OF INTERFACIAL MICROSTRUCTURE ON UNIFORMITY AND THERMAL-STABILITY OF AUNIGE OHMIC CONTACT TO N-TYPE GAAS
SHIH, YC
MURAKAMI, M
WILKIE, EL
CALLEGARI, AC
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (02) : 582 - 590
[9] LOW EMITTER RESISTANCE GAAS BASED HBTS WITHOUT INGAAS CAPS
SLATER, DB
ENQUIST, PM
HUTCHBY, JA
MORRIS, AS
TREW, RJ
[J]. IEEE ELECTRON DEVICE LETTERS, 1994, 15 (05) : 154 - 156
[10] WANG LC, 1994, MATER RES SOC SYMP P, V319, P93

← 1 2 →