CONTACT DEGRADATION OF GAAS TRANSFERRED ELECTRON DEVICES

被引：9

作者：

PALMSTROM, CJ

MORGAN, DV

HOWES, MJ

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS | 1978年 / 150卷 / 02期

关键词：

D O I：

10.1016/0029-554X(78)90380-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：305 / 311

页数：7

共 12 条

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[3] USE OF FOCUSED ION-BEAMS FOR ANALYSIS [J].

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[4] ALLOYING BEHAVIOR OF AU AND AU-GE ON GAAS [J].

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MAYER, JW ;

RODRIGUEZ, V ;

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GOPEN, HJ .

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[5]

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[7]

MORGAN DV, 1977, SOLID STATE ELECTRON, V1, P37

[8] METALLURGICAL AND ELECTRICAL PROPERTIES OF ALLOYED NI-AU-GE FILMS ON N-TYPE GAAS [J].

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[9] NEW METHOD FOR PRODUCING IDEAL METAL-SEMICONDUCTOR OHMIC CONTACTS [J].

SEBESTYEN, T ;

HARTNAGEL, H ;

HERRON, LH .

ELECTRONICS LETTERS, 1974, 10 (18) :372-373

[10] EFFECT OF ALLOYING BEHAVIOR ON ELECTRICAL CHARACTERISTICS OF N-GAAS SCHOTTKY DIODES METALLIZED WITH W, AU, AND PT [J].

SINHA, AK ;

POATE, JM .

APPLIED PHYSICS LETTERS, 1973, 23 (12) :666-668

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