Magnetism of Fe thin layers on GaAs (001)

被引：49

作者：

Filipe, A ^{[1
]}

Schuhl, A ^{[1
]}

机构：

[1] ECOLE POLYTECH,PHYS MAT CONDENSEE LAB,F-91128 PALAISEAU,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 81卷 / 08期

关键词：

D O I：

10.1063/1.364821

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study the magnetic properties of Fe thin films epitaxially grown on GaAs (001) for a large range of substrate temperature. Magnetization deficiency has been detected and studied. Its dependence with both thickness and temperature clearly show the existence of a nearly half-magnetized phase at the interface, covered by ''as-bulk'' Fe. In order to inhibit this interdiffusion, we study several methods. Using previous O-3 oxidation of GaAs, the Fe layer is fully magnetized even for deposition at 200 degrees C. (C) 1997 American Institute of Physics.

引用

页码：4359 / 4361

页数：3

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