TIME-DEPENDENT BALLISTIC ELECTRON-EMISSION MICROSCOPY STUDIES OF A AU/(100)GAAS INTERFACE WITH A NATIVE-OXIDE DIFFUSION BARRIER

被引：31

作者：

TALIN, AA

OHLBERG, DAA

WILLIAMS, RS

SULLIVAN, P

KOUTSELAS, I

WILLIAMS, B

KAVANAGH, KL

机构：

[1] UNIV CALIF LOS ANGELES,CTR SOLID STATE SCI,LOS ANGELES,CA 90024

[2] UNIV CALIF SAN DIEGO,DEPT ELECT ENGN & COMP SCI,LA JOLLA,CA 92093

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 23期

关键词：

D O I：

10.1063/1.109158

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ballistic electron emission microscopy (BEEM) has been used to investigate the effects of a thin interfacial native oxide layer on the electronic properties and stability of a Au/(100) n-GaAs contact as a function of time. The oxide had no effect on the electronic band structure at the interface measured with BEEM, as compared to similar contacts without a diffusion barrier. In addition, the oxide greatly enhanced the electrical homogeneity of the interface and prolonged the ability of the diode to transmit ballistic electrons to more than 35 days.

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页码：2965 / 2966

页数：2

相关论文

共 15 条

[1] OBSERVATION OF INTERFACE BAND-STRUCTURE BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY [J].

BELL, LD ;

KAISER, WJ .

PHYSICAL REVIEW LETTERS, 1988, 61 (20) :2368-2371

[2] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].

Brillson, L. J. .

SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326

[3] INITIAL-STAGES OF THE FORMATION OF THE AU/GAAS(001) INTERFACE - A LOW-ENERGY ION-SCATTERING STUDY [J].

CHARATAN, RM ;

WILLIAMS, RS .

JOURNAL OF APPLIED PHYSICS, 1992, 72 (11) :5226-5232

[4] BALLISTIC ELECTRON-EMISSION MICROSCOPY STUDIES OF AU-CDTE AND AU-GAAS INTERFACES AND BAND-STRUCTURE [J].

FOWELL, AE ;

WILLIAMS, RH ;

RICHARDSON, BE ;

CAFOLLA, AA ;

WESTWOOD, DI ;

WOOLF, DA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (02) :581-584

[5] EFFECT OF GAAS OR GAXAL1-XAS OXIDE COMPOSITION ON SCHOTTKY-BARRIER BEHAVIOR [J].

GARNER, CM ;

SU, CY ;

SAPERSTEIN, WA ;

JEW, KG ;

LEE, CS ;

PEARSON, GL ;

SPICER, WE .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3376-3382

[6] GOLD SILICON INTERFACE MODIFICATION STUDIES [J].

HALLEN, HD ;

FERNANDEZ, A ;

HUANG, T ;

BUHRMAN, RA ;

SILCOX, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (02) :585-589

[7] BALLISTIC-ELECTRON-EMISSION MICROSCOPY INVESTIGATION OF SCHOTTKY-BARRIER INTERFACE FORMATION [J].

HECHT, MH ;

BELL, LD ;

KAISER, WJ ;

GRUNTHANER, FJ .

APPLIED PHYSICS LETTERS, 1989, 55 (08) :780-782

[8] DIRECT INVESTIGATION OF SUBSURFACE INTERFACE ELECTRONIC-STRUCTURE BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY [J].

KAISER, WJ ;

BELL, LD .

PHYSICAL REVIEW LETTERS, 1988, 60 (14) :1406-1409

[9] BALLISTIC ELECTRON-EMISSION MICROSCOPY AND SPECTROSCOPY OF AU/GAAS INTERFACES [J].

KAISER, WJ ;

BELL, LD ;

HECHT, MH ;

GRUNTHANER, FJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04) :945-949

[10] INTERFACIAL CHEMICAL-REACTIVITY OF METAL CONTACTS WITH THIN NATIVE OXIDES OF GAAS [J].

KOWALCZYK, SP ;

WALDROP, JR ;

GRANT, RW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :611-616