Local structure determination of NH2 on Si(111)-(7X7) -: art. no. 125340

被引:12
作者
Bengió, S [1 ]
Ascolani, H
Franco, N
Avila, J
Asensio, MC
Bradshaw, AM
Woodruff, DP
机构
[1] Comis Nacl Energia Atom, CONICET, RA-8400 San Carlos De Bariloche, Rio Negro, Argentina
[2] Comis Nacl Energia Atom, Ctr Atom Bariloche, RA-8400 San Carlos De Bariloche, Rio Negro, Argentina
[3] CSIC, Inst Ciencia Mat, E-28049 Madrid, Spain
[4] Univ Paris 11, LURE, F-91405 Orsay, France
[5] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany
[6] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England
来源
PHYSICAL REVIEW B | 2004年 / 69卷 / 12期
关键词
D O I
10.1103/PhysRevB.69.125340
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
N 1s scanned-energy mode photoelectron diffraction has been used to determine the local adsorption geometry of adsorbed NH2 species on Si(111) (7 X 7) resulting from reaction with NH3 at room temperature. The results show that NH2 is adsorbed (almost) exclusively atop Si surface rest atoms with a Si-N bond length of 1.71 +/- 0.02 Angstrom and very little modification of the geometry of the Si atoms in the layer below. Any coadsorbed NH on the surface is either of low relative coverage or is also adsorbed in local atop sites. There is evidence that a small fraction (8 +/- 7 %) of the NHx species may occupy sites atop Si surface adatoms.
引用
收藏
页数:9
相关论文
共 33 条
[1]   Direct determination of multiple adsorption sites using chemical-shift photoelectron diffraction: Sb/GaAs(110) [J].
Ascolani, H ;
Avila, J ;
Franco, N ;
Asensio, MC .
PHYSICAL REVIEW LETTERS, 1997, 78 (13) :2604-2607
[2]   ATOM-RESOLVED SURFACE-CHEMISTRY STUDIED BY SCANNING TUNNELING MICROSCOPY AND SPECTROSCOPY [J].
AVOURIS, P ;
WOLKOW, R .
PHYSICAL REVIEW B, 1989, 39 (08) :5091-5100
[3]   Atomic structure of the Sb-terminated Si(111) surface:: A photoelectron diffraction study -: art. no. 205326 [J].
Bengió, S ;
Martin, M ;
Avila, J ;
Asensio, MC ;
Ascolani, H .
PHYSICAL REVIEW B, 2002, 65 (20) :2053261-2053267
[4]   Quantitative determination of the adsorption site of the OH radicals in the H2O/Si(100) system -: art. no. 195322 [J].
Bengió, S ;
Ascolani, H ;
Franco, N ;
Avila, J ;
Asensio, MC ;
Dudzik, E ;
McGovern, IT ;
Giessel, T ;
Lindsay, R ;
Bradshaw, AM ;
Woodruff, DP .
PHYSICAL REVIEW B, 2002, 66 (19) :1-8
[5]   USE OF MULTILAYER TECHNIQUES FOR XPS IDENTIFICATION OF VARIOUS NITROGEN ENVIRONMENTS IN THE SI/NH3 SYSTEM [J].
BISCHOFF, JL ;
LUTZ, F ;
BOLMONT, D ;
KUBLER, L .
SURFACE SCIENCE, 1991, 251 :170-174
[6]   NH3 on Si(111)7x7:: Dissociation and surface reactions [J].
Bjorkqvist, M ;
Gothelid, M ;
Grehk, TM ;
Karlsson, UO .
PHYSICAL REVIEW B, 1998, 57 (04) :2327-2333
[7]   Structure determination of ammonia on Cu(110) - a low-symmetry adsorption site [J].
Booth, NA ;
Davis, R ;
Toomes, R ;
Woodruff, DP ;
Hirschmugl, C ;
Schindler, KM ;
Schaff, O ;
Fernandez, V ;
Theobald, A ;
Hofmann, P ;
Lindsay, R ;
Giessel, T ;
Baumgartel, P ;
Bradshaw, AM .
SURFACE SCIENCE, 1997, 387 (1-3) :152-159
[8]   PHOTOEMISSION-STUDIES OF THE REACTIONS OF AMMONIA AND N-ATOMS WITH SI(100)-(2X1) AND SI(111)-(7X7) SURFACES [J].
BOZSO, F ;
AVOURIS, P .
PHYSICAL REVIEW B, 1988, 38 (06) :3937-3942
[9]   SILICON BACKBOND STRAIN EFFECTS ON NH3 SURFACE-CHEMISTRY - SI(111)-(7X7) COMPARED TO SI(100)-(2X1) [J].
CHEN, PJ ;
COLAIANNI, ML ;
YATES, JT .
SURFACE SCIENCE, 1992, 274 (03) :L605-L610
[10]   SURFACE-PROPERTIES OF SI(111)7 X 7 UPON NH3 ADSORPTION AND VACUUM ANNEALING [J].
CHERIF, SM ;
LACHARME, JP ;
SEBENNE, CA .
SURFACE SCIENCE, 1991, 243 (1-3) :113-120