Patterning of planar magnetic nanostructures by ion irradiation

被引:33
作者
Devolder, T [1 ]
Chappert, C
Chen, Y
Cambril, E
Launois, H
Bernas, H
Ferré, J
Jamet, JP
机构
[1] Univ Paris Sud, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France
[2] CNRS, Microstruct & Microelect Lab, UPR 020, F-92220 Bagneux, France
[3] Univ Paris Sud, Ctr Spectrometrie Nucl & Spectrometrie Masse, CNRS, UMR 6412, F-91405 Orsay, France
[4] Univ Paris Sud, Phys Solides Lab, F-91405 Orsay, France
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 06期
关键词
D O I
10.1116/1.590975
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have investigated the ultrahigh resolution of light ion irradiation induced magnetic patterning. High aspect ratio silica masks on Co/Pt multilayers were obtained by e-beam lithography and reactive ion etching with feature sizes down to 30 nm for lines and 20 nm for dots. He+ ion irradiation of the magnetic layers through these masks was used to pattern the magnetic properties. We chose irradiation irradiation conditions such that patterned areas had a coercive force three times lower than the protected areas. After mask removal, we obtained high resolution and high density, planar magnetic nanostructures. Magnetization reversal processes in the line patterns are analyzed with numerical simulations. We suggest that this irradiation induced magnetic patterning technique is promising for both present magneto-optical storage devices and future near field recording. (C) 1999 American Vacuum Society. [S0734-211X(99)16306-6].
引用
收藏
页码:3177 / 3181
页数:5
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