O2 cluster ion-assisted deposition for tin-doped indium oxide films

被引：24

作者：

Matsuo, J ^{[1
]}

Katsumata, H ^{[1
]}

Minami, E ^{[1
]}

Yamada, I ^{[1
]}

机构：

[1] Kyoto Univ, Ion Beam Engn Expt Lab, Kyoto 6068501, Japan

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2000年 / 161卷

关键词：

ITO; cluster; oxidization; ion beam processing;

D O I：

10.1016/S0168-583X(99)00901-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In order to realize high throughput for industrial application, a new gas cluster ion-assisted deposition system has been developed. Tin-doped indium-oxide (ITO) films were formed by using the Oz gas cluster ion beam-assisted deposition technique. Large oxygen cluster ions which can transport thousands of atoms in an ion with very low energy per constituent atom were used iu this deposition process. The energetic oxygen clusters collapse at the surface and react with the metal atoms. About 10% of atoms are incorporated, when the kinetic energy of the cluster ion is above 5 keV. Interactions between cluster ions and substrate atoms occur in the near-surface region and cluster ions can deposit their energy with a high density in a very localized surface region. The oxidation reaction on the surface can be enhanced by energetic cluster ion bombardment which offers a new technique for ion-assisted thin film formation. Very smooth, highly transparent (>80%) and low resistivity films were obtained by using a 7 keV oxygen cluster ion beam. (C) 2000 Published by Elsevier Science B.V. All rights reserved.

引用

页码：952 / 957

页数：6

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