Novel high-density plasma tool for large area flat panel display etching

被引:28
作者
Heinrich, F
Banziger, U
Jentzsch, A
Neumann, G
Huth, C
机构
[1] Fraunhofer-Inst. F. S., D-25524 Itzehoe
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 03期
关键词
D O I
10.1116/1.588973
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A novel dry etch tool - large area source supported ion etching (LASSIE) - has been developed appropriate for the processing of substrate sizes of presently up to 600X400 mm(2). The plasma is produced through an array of four inductively coupled plasma sources driven by one common 13.56 MHz generator. A second rf generator serves for substrate biasing. Plasma diagnostic data suggest that LASSIE has strong capabilities for future large area etch applications avoiding several drawbacks of conventional reactive ion etching (RIE) in parallel-plate reactors. In particular considerably higher etch rates are to be expected since the plasma densities are roughly one order of magnitude higher than in conventional RIE. In addition the processing will be more flexible and better controlled due to the decoupling of plasma densities and ion bombardment energies. A scale-up with respect to the processing of wafer sizes larger than presently envisaged is easily achieved by the LASSIE concept. (C) 1996 American Vacuum Society.
引用
收藏
页码:2000 / 2004
页数:5
相关论文
共 14 条
[1]   MULTIPOLE CONFINED DIFFUSION PLASMA PRODUCED BY 13.56 MHZ ELECTRODELESS SOURCE [J].
BOSWELL, RW ;
PERRY, AJ ;
EMAMI, M .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (06) :3345-3350
[2]  
FLAMM DL, 1991, SOLID STATE TECHNOL, V34, P47
[3]   NEW AND SIMPLE OPTICAL METHOD FOR INSITU ETCH RATE DETERMINATION AND ENDPOINT DETECTION [J].
HEINRICH, F ;
STOLL, HP ;
SCHEER, HC .
APPLIED PHYSICS LETTERS, 1989, 55 (14) :1474-1476
[4]   ANALYSIS AND CONTROL OF ION-BEAM PROCESSING BY OPTICAL SPECTROSCOPY [J].
HEINRICH, F ;
HOFFMANN, P .
VACUUM, 1993, 44 (3-4) :275-279
[5]   LASER-INDUCED FLUORESCENCE AND EMISSION SPECTROSCOPIC STUDY OF MAGNETIC-FIELD EFFECTS IN A LOW-PRESSURE ETCH PLASMA [J].
HEINRICH, F ;
HOFFMANN, P .
JOURNAL OF APPLIED PHYSICS, 1992, 71 (04) :1683-1689
[6]  
HEINRICH F, 1995, P 10 INT C PLASM PRO, P268
[7]  
HEINRICH F, 1989, P SOC PHOTO-OPT INS, V1188, P185
[8]  
HEINRICH F, 1995, Patent No. 5406080
[9]  
HEINRICH F, 1994, EUR TEG PLASM SEM P, P1
[10]  
HOFFMANN PJ, 1995, UNPUB 187 M EL SOC R, P222