Engineering artificial graphene in a two-dimensional electron gas

被引：177

作者：

Gibertini, Marco ^{[1
]}

Singha, Achintya

Pellegrini, Vittorio

Polini, Marco

Vignale, Giovanni ^{[2
]}

Pinczuk, Aron ^{[3
,4
]}

Pfeiffer, Loren N. ^{[5
]}

West, Ken W. ^{[5
]}

机构：

[1] CNR, INFM, NEST, I-56126 Pisa, Italy

[2] Univ Missouri, Dept Phys & Astron, Columbia, MO 65211 USA

[3] Columbia Univ, Dept Phys, New York, NY 10027 USA

[4] Columbia Univ, Dept Appl Phys & Appl Math, New York, NY 10027 USA

[5] Alcatel Lucent Inc, Bell Labs, Murray Hill, NJ 07974 USA

来源：

PHYSICAL REVIEW B | 2009年 / 79卷 / 24期

关键词：

electron mobility; Fermi level; gallium arsenide; graphene; III-V semiconductors; two-dimensional electron gas; SUSPENDED GRAPHENE; TRANSPORT;

D O I：

10.1103/PhysRevB.79.241406

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

At low energy, electrons in doped graphene sheets behave like massless Dirac fermions with a Fermi velocity, which does not depend on carrier density. Here we show that modulating a two-dimensional electron gas with a long-wavelength periodic potential with honeycomb symmetry can lead to the creation of isolated massless Dirac points with tunable Fermi velocity. We provide detailed theoretical estimates to realize such artificial graphenelike system and discuss an experimental realization in a modulation-doped GaAs quantum well. Ultrahigh-mobility electrons with linearly dispersing bands might open new venues for the studies of Dirac-fermion physics in semiconductors.

引用

页数：4

共 35 条

[1] A self-consistent theory for graphene transport [J].