Molecular-beam epitaxy of ZnSe-based heterostructures on Na2S-passivated GaAs substrates

被引：5

作者：

L'vova, TV ^{[1
]}

Sedova, IV ^{[1
]}

Ulin, VP ^{[1
]}

Sorokin, SV ^{[1
]}

Solov'ev, VA ^{[1
]}

Sitnikova, AA ^{[1
]}

Berkovits, VL ^{[1
]}

Ivanov, SV ^{[1
]}

机构：

[1] RAS, Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

VACUUM | 2000年 / 57卷 / 02期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1016/S0042-207X(00)00114-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper we show that simple pre-epitaxial wet chemical treatment of GaAs substrates in Na,S-water solutions allows one to grow reproducibly by molecular beam epitaxy (MBE) ZnSe-based structures with significantly lowered stacking fault (SF) density down to similar to 3 x 10(5) cm(-2). This defect density is comparable with that obtained on the (2 x 4)As-stabilized surfaces of GaAs MBE grown buffer layer at the same ZnSe growth initiation procedure. This effect is shown to be achieved by development of optimized passivating and annealing procedures, which produce oxygen and gallium-free GaAs surface terminated with As or S dimmers. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：163 / 169

页数：7

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