Polarization fields in nitride-based quantum dots grown on nonpolar substrates

被引：44

作者：

Schulz, Stefan ^{[1
]}

Berube, Arnaud ^{[1
]}

O'Reilly, Eoin P. ^{[1
,2
]}

机构：

[1] Tyndall Natl Inst, Cork, Ireland

[2] Univ Coll, Dept Phys, Cork, Ireland

来源：

PHYSICAL REVIEW B | 2009年 / 79卷 / 08期

基金：

爱尔兰科学基金会;

关键词：

aluminium compounds; gallium compounds; ground states; III-V semiconductors; indium compounds; polarisation; semiconductor quantum dots; substrates; wide band gap semiconductors; ALUMINUM NITRIDE; SEMICONDUCTORS; COEFFICIENT;

D O I：

10.1103/PhysRevB.79.081401

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We use a surface-integral method to determine the polarization potential in nitride-based quantum dots (QDs) grown on a nonpolar substrate. There is uncertainty in the literature regarding the sign of the piezoelectric constant e(15). We find that only a negative e(15) can give the reduced electrostatic built-in field found experimentally in nonpolar GaN/AlN QDs. Our analysis of nonpolar InN/GaN QDs indicates that a significant built-in field remains in these structures. We calculate that despite the reduced polarization potential, ground-state electrons and holes can remain spatially separated in GaN/AlN QDs.

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页数：4

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