Anisotropic strain relaxation in a-plane GaN quantum dots

被引：20

作者：

Founta, S.

Coraux, J.

Jalabert, D.

Bougerol, C.

Rol, F.

Mariette, H.

Renevier, H.

Daudin, B.

Oliver, R. A.

Humphreys, C. J.

Noakes, T. C. Q.

Bailey, P.

机构：

[1] CEA, CNRS Grp, Dept Rech Fondamentale Mat Condensee, F-38054 Grenoble, France

[2] Univ Grenoble 1, Lab Spect Phys, F-38402 St Martin Dheres, France

[3] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

[4] Daresbury Lab, Warrington WA4 4AD, Cheshire, England

来源：

JOURNAL OF APPLIED PHYSICS | 2007年 / 101卷 / 06期

基金：

英国工程与自然科学研究理事会;

关键词：

MOLECULAR-BEAM EPITAXY; DISPLACEMENT; ISLANDS; GROWTH; GAAS;

D O I：

10.1063/1.2713937

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Medium energy ion scattering (MEIS) has been used to measure at the monolayer scale the strain profile of self-organized GaN quantum dots grown on (11-20) or a-plane AlN by molecular-beam epitaxy. By confronting the MEIS results with a structural analysis carried out by atomic force microscopy, it is established that the strain profile is anisotropic, i.e., fully elastic along [1-100] and a combination of plastic and elastic along [0001]. High resolution transmission electron microscopy measurements reveal the presence of misfit dislocations with 1/2 [0001] Burgers vector, consistent with MEIS data. (c) 2007 American Institute of Physics.

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页数：7

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