Aggregation of monocrystalline beta-FeSi2 by annealing and by Si overlayer growth

被引：53

作者：

Suemasu, T ^{[1
]}

Tanaka, M ^{[1
]}

Fujii, T ^{[1
]}

Hashimoto, S ^{[1
]}

Kumagai, Y ^{[1
]}

Hasegawa, F ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS TSUKUBA R&D CTR LTD, TSUKUBA, IBARAKI 305, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 9AB期

关键词：

beta-FeSi2; aggregation; reactive deposition epitaxy; Si-MBE; XTEM;

D O I：

10.1143/JJAP.36.L1225

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

beta-FeSi2 films grown on Si(001) by the reactive deposition epitaxy (RDE) aggregated into islands after annealing at 850 degrees C for one hour in ultrahigh vacuum (UHV). When a 100-nm-thick Si overlayer was grown epitaxially at 750 degrees C by molecular beam epitaxy (MBE), the beta-FeSi2 islands aggregated further into a spherical shape in Si crystals. Observation with cross-sectional transmission electron microscope (XTEM) revealed that the epitaxial relationship between the two materials and monocrystalline nature were preserved even after the annealing and the Si overgrowth.

引用

页码：L1225 / L1228

页数：4

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