Selective electroless photoetching of n-type InP in acidic solution containing an heteropolyanion (SiMo12O404-)

被引：3

作者：

Debiemme-Chouvy, C ^{[1
]}

Quennoy, A ^{[1
]}

Gérard, I ^{[1
]}

机构：

[1] Univ Versailles, Inst Lavoisier, IREM, CNRS,UMR, F-78000 Versailles, France

来源：

ELECTROCHEMISTRY COMMUNICATIONS | 2002年 / 4卷 / 02期

关键词：

InP; electroless photodissolution; etching; heteropolyanion; SiMo12O404-;

D O I：

10.1016/S1388-2481(01)00281-8

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A new process to locally photoetch n-type InP under electroless conditions is described. It is based on the use of a polyoxometalate, molybdenum heteropolyanion (SiMo12O404-), dissolved in acidic solution, as an oxidizing agent. The etching is confined to where the light is incident to the n-InP surface. The etch rate depends either on the heteropolyanion concentration or on the incident light intensity. The use of SiMo12O404- associated with light also makes it possible to perform dopant-type selective etching because either in the dark or under illumination p-InP does not undergo a dissolution process. This system should also provide a good means for n-InP defect revealing. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：97 / 101

页数：5