REVEALING OF DEFECTS IN INP BY SHALLOW (SUB-MICRON) PHOTOETCHING

被引：29

作者：

WEYHER, JL

GILING, LJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 01期

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D O I：

10.1063/1.335715

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：219 / 222

页数：4

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