学术探索
学术期刊
新闻热点
数据分析
智能评审

Axial dechanneling in compound crystals with point defects and defect analysis by RBS

被引：51
作者：
Gartner, K
机构：
[1] Friedrich-Schiller-Univ. Jena, Inst. für Festkörperphysik, D-077443 Jena
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1997年 / 132卷 / 01期
关键词：
dechanneling; theoretical description; Rutherford backscattering spectrometry; defect analysis; compound crystals; GaAs;
D O I：
10.1016/S0168-583X(97)00381-9
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The general channeling concept of Lindhard is extended to the description of channeling phenomena in compound crystals. Based on this modified concept the description of axial dechanneling in elementary crystals elaborated by Gartner et al. is also extended to compound crystals. It is applied to the case of compound crystals containing two different kinds of point defects described by two different configurations of uncorrelatedly displaced lattice atoms. Based on this description the analysis of point defects by Rutherford Backscattering Spectrometry (RES) can be extended to compound crystals and to more complex point defect structures. The progress in defect analysis obtained is demonstrated for two examples of radiation damage in GaAs. (C) 1997 Elsevier Science B.V.
引用
收藏
页码：147 / 158
页数：12
相关论文
共 23 条
[1]  
[Anonymous], 1965, K DAN VIDENSK SELSK
[2]   DEFECT STUDIES IN CRYSTALS BY MEANS OF CHANNELING [J].
BOGH, E .
CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :653-&
[3]  
Bonderup E., 1972, Radiation Effects, V12, P261, DOI 10.1080/00337577208231151
[4]   CHANNELING ANALYSIS OF STACKING DEFECTS IN EPITAXIAL SI LAYERS [J].
CAMPISANO, SU ;
FOTI, G ;
RIMINI, E ;
PICRAUX, ST .
NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3) :371-376
[5]   DEPTH PROFILES OF LATTICE DISORDER RESULTING FORM ION BOMBARDMENT OF SILICON SINGLE CRYSTALS [J].
FELDMAN, LC ;
RODGERS, JW .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) :3776-&
[6]   TEMPERATURE-DEPENDENCE OF AXIAL DECHANNELING BY POINT-DEFECTS [J].
GARTNER, K ;
WESCH, W ;
GOTZ, G .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1990, 48 (1-4) :192-196
[7]   AXIAL DECHANNELING .2. POINT-DEFECTS [J].
GARTNER, K ;
HEHL, K ;
SCHLOTZHAUER, G .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 4 (01) :55-62
[8]   ENERGY-DEPENDENCE OF DECHANNELING DUE TO DISLOCATION LOOPS [J].
GARTNER, K ;
UGUZZONI, A .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 67 (1-4) :189-193
[9]   AXIAL DECHANNELING .4. STACKING-FAULTS [J].
GARTNER, K ;
HEHL, K .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 12 (02) :205-211
[10]   AXIAL DECHANNELING .1. PERFECT CRYSTAL [J].
GARTNER, K ;
HEHL, K ;
SCHLOTZHAUER, G .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 216 (1-2) :275-286
123