Coupled quantum dots in single-wall carbon nanotubes

被引：8

作者：

Ishibashi, K

Suzuki, M

Ida, T

Aoyagi, Y

机构：

[1] Inst Phys & Chem Res, Semicond Lab, Wako, Saitama 3510198, Japan

[2] CREST, Japan Sci & Technol, Kawaguchi, Saitama 3320012, Japan

[3] Univ Tokyo, Dept Elect & Elect Engn, Kawagoe, Saitama 3508585, Japan

[4] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, Yokohama, Kanagawa, Japan

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2002年 / 13卷 / 2-4期

关键词：

carbon nanotubes; coupled quantum dots; Coulomb blockade;

D O I：

10.1016/S1386-9477(02)00282-5

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Electrical transport measurements have been carried out below 100 mK on individual single-wall carbon nanotube, on which a narrow SiO2 layer was deposited between source and drain contacts. The current voltage curves with different gate voltages showed modulation of the current-suppressed region near zero bias voltage (Coulomb gap), and a negative differential conductance at large biases. These results together with the bias dependence of Coulomb blockade oscillations suggest the formation of the coupled quantum dots in carbon nanotubes. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：782 / 785

页数：4

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