Improvement in the bias stability of amorphous indium gallium zinc oxide thin-film transistors using an O2 plasma-treated insulator

被引：95

作者：

Moon, Yeon-Keon ^{[1
]}

Lee, Sih ^{[1
]}

Kim, Woong-Sun ^{[1
]}

Kang, Byung-Woo ^{[1
]}

Jeong, Chang-Oh ^{[2
]}

Lee, Dong-Hoon ^{[2
]}

Park, Jong-Wan ^{[1
]}

机构：

[1] Hanyang Univ, Dept Mat Sci & Engn, Seoul 133791, South Korea

[2] Samsung Elect Co Ltd, LCD Business, Yongin 446711, Gyonggi Do, South Korea

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 01期

关键词：

D O I：

10.1063/1.3167816

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of an O-2 plasma-treated SiNX-based insulator on the interfacial property and the device performances of amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs) were investigated. We tried to improve the interfacial characteristics by reducing the trap density between the SiNX gate insulator and a-IGZO channel by the O-2 plasma treatment. The plasma treated- device performances were remarkably improved. The drastic improvements obtained for the O-2 plasma-treated a-IGZO TFTs included excellent bias stability as well as a high field effect mobility (mu(FE)) of 19.4 cm(2)/V s, an on/off current (I-ON/I-OFF) of 108, and a subthreshold value (S) of 0.5 V/decade. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3167816]

引用

页数：3

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