Time-resolved photoluminescence of erbium centers in amorphous hydrogenated silicon

被引：18

作者：

Kamenev, BV

Timoshenko, VY ^{[1
]}

Konstantinova, EA

Kudoyarova, VK

Terukov, EI

Kashkarov, PK

机构：

[1] Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119899, Russia

[2] RAS, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2002年 / 299卷

关键词：

D O I：

10.1016/S0022-3093(02)00954-7

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A time-resolved photoluminescence (PL) technique is employed to study the mechanisms of excitation and deexcitation of Er3- ions in amorphous hydrogenated silicon (a-Si:H) at temperatures 5-300 K. The PL at 1.5 mum is found to arise within times shorter than a 100 ns after irradiation with a nanosecond laser pulse, indicating a fast energy transfer from the electronic excitation of a-Si:H to the Er3- ions. The PL transients exhibit a stretched exponential decay with mean lifetime ranging from 20 to 35 lis when the temperature decreases from 300 K down to 5 K. The experimental results support the model of defect-related excitation and de-excitation of the Er3- ions. (C) 2002 Elsevier Science B.V. All rights reserved.

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页码：668 / 672

页数：5

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