Correlation between photoluminescence efficiency and density of paramagnetic defects in Er-doped hydrogenated amorphous silicon

被引：8

作者：

Konstantinova, EA ^{[1
]}

Kamenev, BV

Kashkarov, PK

Timoshenko, VY

Kudoyarova, VK

Terukov, EI

机构：

[1] Tech Univ Munich, Phys Dept E16, D-85747 Garching, Germany

[2] Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119899, Russia

[3] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2001年 / 282卷 / 2-3期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1016/S0022-3093(01)00360-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Photoluminescence and electron paramagnetic resonance in layers of hydrogenated amorphous silicon doped with erbium and oxygen have been investigated, The intensity of Er-related photoluminescence (1.54 mum) depends nonmonotonically on the ratio between erbium and oxygen content varied from 0.1 to 3. The photoluminescence efficiency correlates with the density of spin centers (most likely Si dangling bonds (DBs)) that gives evidence for the role of Si DBs in the electronic excitation of Er-ions. (C) 2001 Published by Elsevier Science B.V.

引用

页码：321 / 324

页数：4

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