Structure and correlations in porous silicon studied by X-ray scattering methods

被引:18
作者
Binder, M
Edelmann, T
Metzger, TH
Peisl, J
机构
[1] Sektion Physik, Ludwig-Maximilians-Univ. Munchen, 80539 München
关键词
semiconductors; X-ray scattering; crystal structure and symmetry;
D O I
10.1016/0038-1098(96)00376-6
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The internal structure of p(-) and p(+) doped porous silicon (PS) has been investigated by small-angle X-ray scattering (SAXS) and grazing incidence diffraction (GID) using synchrotron radiation. The silicon morphology in p(-) doped samples shows a bimodal distribution of small (some nm) and larger (some 10 nm) particle sizes for all porosities investigated. The diameter of the small particles decreases with increasing porosity, which is accompanied by a blue shift of the luminescence as predicted by theory. In p(+) doped PS we found predominantly large cylindrically shaped particles, oriented perpendicular to the surface, forming a perfect lattice with holes. These particles are arranged with preferred lateral distances with a correlation length in the order of their sizes. Copyright (C) 1996 Elsevier Science Ltd
引用
收藏
页码:13 / 16
页数:4
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