Comparison of undoped and doped high resistivity CdTe and (Cd,Zn)Te detector crystals

被引：56

作者：

Fiederle, M ^{[1
]}

Fauler, A

Konrath, J

Babentsov, V

Franc, J

James, RB

机构：

[1] Univ Freiburg, Freiburger Mat Forschungszentrum, D-79104 Freiburg, Germany

[2] Brookhaven Natl Lab, Upton, NY 11973 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2004年 / 51卷 / 04期

关键词：

CdTe; CdZnTe; compensation mechanism; radiation detectors;

D O I：

10.1109/TNS.2004.832958

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

CdTe and (Cd,Zn)Te crystals were grown to study the compensation mechanism and the influence on the transport properties. Undoped and doped crystals with Sn, In, and Ge were grown. The crystals showed resistivities up to 10(9) Omegacm and higher. The transport properties depended strongly on the dopant and the compensation mechanism. For the doping with a deep donor, the mobility-lifetime product of electrons were 2 x 10(-5) cm/V and 4 x 10(-4) M cm(2)/V for Ge and Sn doped, respectively. The highest values were obtained for In doped (Cd,Zn)Te with 3.3 x 10(-3) cm(2)/V.

引用

页码：1864 / 1868

页数：5

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