Semi-insulating cadmium telluride at low impurity concentrations

被引：8

作者：

Fiederle, M

Babentsov, V

Fauler, A

Witte, W

Benz, KW

James, RB

机构：

[1] Univ Freiburg, Freiburger Mat Forschungszentrum, Inst Kristallog, D-79104 Freiburg, Germany

[2] Brookhaven Natl Lab, Energy Environm & Natl Secur Directorate, Upton, NY 11973 USA

来源：

JOURNAL OF MATERIALS RESEARCH | 2004年 / 19卷 / 02期

关键词：

D O I：

10.1557/jmr.2004.19.2.405

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report a substantial reduction in the impurity concentration of semi-insulating CdTe:Ge grown by the vertical Bridgman method by using sublimation of the feed material. Specific resistivity (rho(dark)) values of up to 3 x 10(9) Omega cm were obtained for samples with a relatively high photosensitivity (PS) value and optimal compensation. Concentrations of impurities in the feed and as-grown crystals were determined by the glow discharge mass spectroscopy (GDMS) method. The energy levels in the band-gap were studied by photoluminescence (PL), and the data were correlated with the GDMS measurements. The highest values of rho(dark) and PS were observed in the regions where the PL bands via the deep levels of Ge and Te antisite were present.

引用

页码：405 / 408

页数：4

共 22 条

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Babentsov V, 2001, CRYST RES TECHNOL, V36, P535, DOI 10.1002/1521-4079(200107)36:6<535::AID-CRAT535>3.0.CO

[2]

2-R

[3] CHARACTERIZATION OF P-TYPE CDTE BRIDGMAN CRYSTALS BY INFRARED EXTINCTION SPECTRA [J].