Gain measurements on GaAs-based quantum cascade lasers using a two-section cavity technique

被引:26
作者
Barbieri, S
Sirtori, C
Page, H
Beck, M
Faist, J
Nagle, J
机构
[1] Thomson CSF, Cent Rech Lab, F-91404 Orsay, France
[2] Scuola Normale Super Pisa, I-56126 Pisa, Italy
[3] INFM, I-56126 Pisa, Italy
[4] Univ Neuchatel, Inst Phys, CH-2000 Neuchatel, Switzerland
关键词
intersubband transitions; mid-infrared; resonant tunneling; unipolar semiconductor laser;
D O I
10.1109/3.845731
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A two-section cavity device has been used to measure gain spectra and waveguide losses of a GaAs-based quantum cascade laser. The device operates at 8.9 mu m and optical confinement is obtained by means of Al-free cladding layers. We investigated the gain characteristics in a spectral window of similar to 60 meV and up to 200 K, For current densities ranging from 1 to 8 kA/cm(2), we report a constant gain coefficient of 13 cm/kA at 4K and 6 cm/kA at 200 K, At low temperatures and for current densities above 8 kA/cm(2),we observe gain saturation which we attribute to a reduced electron injection in the active region caused by space charge effects, We report a value of 22 cm(-1) for the waveguide tosses in good agreement with previous measurements.
引用
收藏
页码:736 / 741
页数:6
相关论文
共 19 条
[11]  
PALIK ED, 1985, HDB OPTICAL COSNTANT
[12]   Mid-infrared (8.5 mu m) semiconductor lasers operating at room temperature [J].
Sirtori, C ;
Faist, J ;
Capasso, F ;
Sivco, DL ;
Hutchinson, AL ;
Cho, AY .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (03) :294-296
[13]   Long wavelength infrared (lambda similar or equal to 11 mu m) quantum cascade lasers [J].
Sirtori, C ;
Faist, J ;
Capasso, F ;
Sivco, DL ;
Hutchinson, AL ;
Cho, AY .
APPLIED PHYSICS LETTERS, 1996, 69 (19) :2810-2812
[14]   Influence of DX centers on the performance of unipolar semiconductor lasers based on GaAs-AlxGa1-xAs [J].
Sirtori, C ;
Barbieri, S ;
Kruck, P ;
Piazza, V ;
Beck, M ;
Faist, J ;
Oesterle, U ;
Collot, P ;
Nagle, J .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (09) :1090-1092
[15]   Resonant tunneling in quantum cascade lasers [J].
Sirtori, C ;
Capasso, F ;
Faist, J ;
Hutchinson, AL ;
Sivco, DL ;
Cho, AY .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1998, 34 (09) :1722-1729
[16]   Low-loss Al-free waveguides for unipolar semiconductor lasers [J].
Sirtori, C ;
Kruck, P ;
Barbieri, S ;
Page, H ;
Nagle, J ;
Beck, M ;
Faist, J ;
Oesterle, U .
APPLIED PHYSICS LETTERS, 1999, 75 (25) :3911-3913
[17]   GaAs/AlxGa1-x as quantum cascade lasers [J].
Sirtori, C ;
Kruck, P ;
Barbieri, S ;
Collot, P ;
Nagle, J ;
Beck, M ;
Faist, J ;
Oesterle, U .
APPLIED PHYSICS LETTERS, 1998, 73 (24) :3486-3488
[18]   High performance interminiband quantum cascade lasers with graded superlattices [J].
Tredicucci, A ;
Capasso, F ;
Gmachl, C ;
Sivco, DL ;
Hutchinson, AL ;
Cho, AY .
APPLIED PHYSICS LETTERS, 1998, 73 (15) :2101-2103
[19]   Spectroscopic determination of the electron distribution in a quantum cascade structure [J].
Wilson, LR ;
Keightley, PT ;
Cockburn, JW ;
Duck, JP ;
Skolnick, MS ;
Clark, JC ;
Hill, G ;
Moran, M ;
Grey, R .
APPLIED PHYSICS LETTERS, 1999, 75 (14) :2079-2081