Chemical Vapor Deposition Repair of Graphene Oxide: A Route to Highly Conductive Graphene Monolayers

被引：265

作者：

Lopez, Vicente ^{[2
]}

Sundaram, Ravi S. ^{[3
]}

Gomez-Navarro, Cristina ^{[1
,3
]}

Olea, David ^{[1
]}

Burghard, Marko ^{[3
]}

Gomez-Herrero, Julio ^{[1
]}

Zamora, Felix ^{[2
]}

Kern, Klaus ^{[3
,4
]}

机构：

[1] Univ Autonoma Madrid, Dept Fis Mat Condensada, E-28049 Madrid, Spain

[2] Univ Autonoma Madrid, Dept Quim Inorgan, E-28049 Madrid, Spain

[3] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

[4] Ecole Polytech Fed Lausanne, CH-1015 Lausanne, Switzerland

来源：

ADVANCED MATERIALS | 2009年 / 21卷 / 46期

关键词：

TRANSPARENT; GRAPHITE; TRANSPORT; SHEETS; FILMS;

D O I：

10.1002/adma.200901582

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Highly conductive chemically derived graphene can be synthesized using an efficient two-step method starting from graphene oxide. The key strategy involves the use of a CVD process to heal defects contained within the monolayers, which imparts a two order of magnitude enhancement of electrical conductivity over the merely reduced samples.

引用

页码：4683 / +

页数：5

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