Three-dimensional site control of self-organized InAs quantum dots by in situ scanning tunneling probe-assisted nanolithography and molecular beam epitaxy

Self-organization sites of InAs quantum dots (QDs) are arranged to form three-dimensional (3D) lattices by ultrahigh vacuum in situ processing. In-plane QD arrangement in the 3D lattices is initially defined by site-controlled InAs QD arrays fabricated by a scanning tunneling microscope probe-assisted technique. With the QD arrays used as strain templates, self-organized InAs QDs are vertically aligned by multistacking, resulting in the 3D QD lattices. The photoluminescence from the 3D QD structures is investigated at room temperature. (C) 2002 American Vacuum Society.