Approaches to proton single-event rate calculations

被引:46
作者
Petersen, EL
机构
关键词
D O I
10.1109/23.490896
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This article discusses the fundamentals of proton-induced single-event upsets and of the various methods that have been developed to calculate upset rates, Two types of approaches are used based on nuclear-reaction analysis, Several aspects can be analyzed using analytic methods, but a complete description is not available. The paper presents an analytic description for the component due to elastic-scattering recoils, There have been a number of studies made using Monte Carlo methods. These can completely describe the reaction processes, including the effect of nuclear reactions occurring outside the device-sensitive volume, They have not included the elastic-scattering processes, The article describes the semiempirical approaches that are most widely used, The quality of previous upset predictions relative to space observations is discussed and leads to comments about the desired quality of future predictions. Brief sections treat the possible testing limitation due to total ionizing dose effects, the relationship of proton and heavy-ion upsets, upsets due to direct proton ionization, and relative proton and cosmic-ray upset rates.
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页码:496 / 504
页数:9
相关论文
共 41 条
[1]   PROTON UPSETS IN ORBIT [J].
BENDEL, WL ;
PETERSEN, EL .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4481-4485
[2]   PREDICTING SINGLE EVENT UPSETS IN THE EARTHS PROTON BELTS [J].
BENDEL, WL ;
PETERSEN, EL .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1201-1206
[3]   A MODEL FOR PROTON-INDUCED SEU [J].
BION, T ;
BOURRIEAU, J .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1989, 36 (06) :2281-2286
[4]   MICROVOLUME ENERGY DEPOSITION FROM HIGH-ENERGY PROTON-SILICON REACTIONS [J].
BRADFORD, JN .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) :2085-2089
[5]  
DOUCIN B, 1994, IEEE T NUCL SCI, V41, P592
[6]   CHARGE-DEPOSITION SPECTRA IN THIN SLABS OF SILICON INDUCED BY ENERGETIC PROTONS [J].
ELTELEATY, S ;
FARRELL, GE ;
MCNULTY, PJ .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4394-4397
[7]   MICRODOSIMETRIC ANALYSIS OF PROTON-INDUCED REACTIONS IN SILICON AND GALLIUM-ARSENIDE [J].
FARRELL, GE ;
MCNULTY, PJ ;
ABDELKADER, W .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1073-1077
[8]   MICRODOSIMETRIC ASPECTS OF PROTON-INDUCED NUCLEAR-REACTIONS IN THIN-LAYERS OF SILICON [J].
FARRELL, GE ;
MCNULTY, PJ .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) :2012-2016
[9]   SINGLE EVENT UPSET OF DYNAMIC RAMS BY NEUTRONS AND PROTONS [J].
GUENZER, CS ;
WOLICKI, EA ;
ALLAS, RG .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1979, 26 (06) :5048-5053
[10]   ENERGY-SPECTRA OF HEAVY FRAGMENTS FROM THE INTERACTION OF PROTONS WITH COMMUNICATIONS MATERIALS [J].
HAMM, RN ;
RUSTGI, ML ;
WRIGHT, HA ;
TURNER, JE .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) :4004-4006