RETRACTED: Large Tunnel Magnetoresistance of 1056% at Room Temperature in MgO Based Double Barrier Magnetic Tunnel Junction (Retracted article. See vol. 4, artn no. 019201, 2011)

被引：61

作者：

Jiang, Lixian ^{[1
]}

Naganuma, Hiroshi ^{[1
]}

Oogane, Mikihiko ^{[1
]}

Ando, Yasuo ^{[1
]}

机构：

[1] Tohoku Univ, Dept Appl Phys, Grad Sch Engn, Aoba Ku, Sendai, Miyagi 9808579, Japan

来源：

APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 08期

关键词：

Silica;

D O I：

10.1143/APEX.2.083002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

CoFeB/MgO/CoFeB/MgO/CoFeB double barrier magnetic tunnel junctions (DBMTJs) with thin middle layers were fabricated on SiO2/Si(001) substrates by r.f. magnetron sputtering. We successfully obtained a large tunnel magnetoresistance of 1056% at room temperature in a DBMTJ with a middle CoFeB layer thickness of 1.2 nm that was fabricated at a relatively low post-deposition annealing temperature of 350 degrees C. This DBMTJ also realized sharp magnetization switching in the free middle CoFeB layer, which is attributed to strong antiferromagnetic coupling between the exterior CoFeB and PtMn layers. These favorable magnetoresistive properties offer interesting possibilities for developing practical spintronics applications and noble magnetotransport physics. (C) 2009 The Japan Society of Applied Physics

引用

页数：3

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