Effect of electrode composition on the tunnel magnetoresistance of pseudo-spin-valve magnetic tunnel junction with a MgO tunnel barrier

被引：272

作者：

Lee, Y. M.

Hayakawa, J.

Ikeda, S.

Matsukura, F.

Ohno, H.

机构：

[1] Tohoku Univ, Res Inst Elect Commun, Lab Nanoelect & Spintron, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Hitachi Ltd, Adv Res Lab, Kokubunji, Tokyo 1858601, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 21期

关键词：

D O I：

10.1063/1.2742576

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors investigate the effect of electrode composition on the tunnel magnetoresistance (TMR) ratio of (CoxFe100-x)(80)B-20/MgO/(CoxFe100-x)(80)B-20 pseudo-spin-valve magnetic tunnel junctions (MTJs). TMR ratio is found to strongly depend on the composition and thicknesses of CoFeB. High resolution transmission electron microscopy shows that the crystallization process of CoFeB during annealing depends on the composition and the thicknesses of the CoFeB film, resulting in different TMR ratios. A TMR ratio of 500% at room temperature and of 1010% at 5 K are observed in a MTJ having 4.3 nm and 4-nm-thick (Co25Fe75)(80)B-20 electrodes with a 2.1-nm-thick MgO barrier annealed at 475 degrees C. (c) 2007 American Institute of Physics.

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页数：3

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