Influence of annealing on the bias voltage dependence of tunneling magnetoresistance in MgO double-barrier magnetic tunnel junctions with CoFeB electrodes

被引：36

作者：

Feng, Gen ^{[1
]}

van Dijken, Sebastiaan

Coey, J. M. D.

机构：

[1] Trinity Coll Dublin, CRANN, Dublin 2, Ireland

[2] Trinity Coll Dublin, Sch Phys, Dublin 2, Ireland

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 16期

基金：

爱尔兰科学基金会;

关键词：

D O I：

10.1063/1.2362977

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Double-barrier magnetic tunnel junctions with two MgO barriers and three CoFeB layers exhibiting tunneling magnetoresistance (TMR) values of more than 100% were fabricated. The bias voltage dependence of the TMR ratio is highly asymmetric after annealing at low temperatures, indicating dissimilar CoFeB/MgO interfaces. The TMR effect decays very slowly for positive bias and is only reduced to half of its maximum value at V-1/2=1.88 V when the junctions are processed at 200 degrees C. The largest output voltage, 0.62 V, is obtained after annealing at 300 degrees C, a temperature that combines high TMR ratios with a considerable asymmetric bias dependence.

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页数：3

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共 23 条

[1] Spin-dependent tunneling spectroscopy in single-crystal Fe/MgO/Fe tunnel junctions [J].

Ando, Y ;

Miyakoshi, T ;

Oogane, M ;

Miyazaki, T ;

Kubota, H ;

Ando, K ;

Yuasa, S .

APPLIED PHYSICS LETTERS, 2005, 87 (14) :1-3

[2] Spin-dependent tunneling conductance of Fe|MgO|Fe sandwiches -: art. no. 054416 [J].

Butler, WH ;

Zhang, XG ;

Schulthess, TC ;

MacLaren, JM .

PHYSICAL REVIEW B, 2001, 63 (05)

[3] Low tunnel magnetoresistance dependence versus bias voltage in double barrier magnetic tunnel junction [J].

Colis, S ;

Gieres, G ;

Bär, L ;

Wecker, J .

APPLIED PHYSICS LETTERS, 2003, 83 (05) :948-950

[4] 230% room-temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions [J].

Djayaprawira, DD ;

Tsunekawa, K ;

Nagai, M ;

Maehara, H ;

Yamagata, S ;

Watanabe, N ;

Yuasa, S ;

Suzuki, Y ;

Ando, K .

APPLIED PHYSICS LETTERS, 2005, 86 (09) :1-3

[5] Tunnel magnetoresistance in MgO-barrier magnetic tunnel junctions with bcc-CoFe(B) and fcc-CoFe free layers [J].

Ikeda, S. ;

Hayakawa, J. ;

Lee, Y. M. ;

Tanikawa, T. ;

Matsukura, F. ;

Ohno, H. .

JOURNAL OF APPLIED PHYSICS, 2006, 99 (08)

[6] Microstructure and exchange coupling parameters of MTJ with CoFeB bottom electrode [J].

Kanak, J ;

Stobiecki, T ;

Schebaum, O ;

Reiss, G ;

Brückl, H .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2006, 243 (01) :197-201

[7] Influence of the annealing field strength on exchange bias and magnetoresistance of spin valves with IrMn [J].

Kerr, E ;

van Dijken, S ;

Coey, JMD .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (09)

[8] Effect of finite magnetic film thickness on Neel coupling in spin valves [J].

Kools, JCS ;

Kula, W ;

Mauri, D ;

Lin, T .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (08) :4466-4468

[9] Inelastic tunneling spectroscopy of magnetic tunnel junctions based on CoFeB/MgO/CoFeB with Mg insertion layer [J].

Miao, Guo-Xing ;

Chetry, Krishna B. ;

Gupta, Arunava ;

Butler, William H. ;

Tsunekawa, Koji ;

Djayaprawira, David ;

Xiao, Gang .

JOURNAL OF APPLIED PHYSICS, 2006, 99 (08)

[10] Enhanced tunnel magnetoresistance at high bias voltage in double-barrier planar junctions [J].

Montaigne, F ;

Nassar, J ;

Vaures, A ;

Van Dau, FN ;

Petroff, F ;

Schuhl, A ;

Fert, A .

APPLIED PHYSICS LETTERS, 1998, 73 (19) :2829-2831