Half-Cycle Atomic Layer Deposition Reaction Study Using O3 and H2O Oxidation of Al2O3 on In0.53Ga0.47As

被引：34

作者：

Brennan, B. ^{[1
,2
]}

Milojevic, M. ^{[3
]}

Kim, H. C. ^{[3
]}

Hurley, P. K. ^{[4
]}

Kim, J. ^{[3
]}

Hughes, G. ^{[1
,2
]}

Wallace, R. M. ^{[3
]}

机构：

[1] Dublin City Univ, Sch Phys Sci, Dublin 9, Ireland

[2] Dublin City Univ, Natl Ctr Sensor Res, Dublin 9, Ireland

[3] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75083 USA

[4] Natl Univ Ireland Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2009年 / 12卷 / 06期

基金：

爱尔兰科学基金会;

关键词：

aluminium; ammonium compounds; atomic layer deposition; gallium arsenide; III-V semiconductors; indium compounds; oxidation; passivation; DIELECTRICS;

D O I：

10.1149/1.3109624

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The effect of water and ozone as the oxidant in the atomic layer deposition (ALD) of aluminum oxide on the ammonium-sulfide-passivated In0.53Ga0.47As surface is compared using X-ray photoelectron spectroscopy (XPS) after each "half-cycle" of the ALD process. While the first half-cycle of the aluminum precursor tri-methyl aluminum (TMA) reduces the residual native oxides to within detection limits of XPS, the ozone oxidation process causes significant reoxidation of the substrate in comparison to the water-based process. Subsequent TMA pulses fail to remove the excess interfacial oxides caused by ozone oxidation, resulting in the formation of an oxide interlayer.

引用

页码：H205 / H207

页数：3

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