S passivation of GaAs and band bending reduction upon atomic layer deposition of HfO2/Al2O3 nanolaminates

被引：43

作者：

Aguirre-Tostado, F. S. ^{[1
]}

Milojevic, M. ^{[1
]}

Choi, K. J. ^{[1
]}

Kim, H. C. ^{[1
]}

Hinkle, C. L. ^{[1
]}

Vogel, E. M. ^{[1
]}

Kim, J. ^{[1
]}

Yang, T. ^{[2
,3
]}

Xuan, Y. ^{[2
,3
]}

Ye, P. D. ^{[2
,3
]}

Wallace, R. M. ^{[1
]}

机构：

[1] Univ Texas Dallas, Richardson, TX 75083 USA

[2] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

[3] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 06期

关键词：

D O I：

10.1063/1.2961003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A systematic study of the interface engineering and dielectric properties of nanolaminated hafnium aluminate on GaAs is presented. The dielectrics were deposited using atomic layer deposition of alternating cycles of HfO2 and Al2O3 on GaAs substrates. High resolution x-ray photoelectron spectroscopy (XPS) showed differences in space charge amounts at the interface for the two surface treatments [NH4OH or (NH4)(2)S]. In-situ XPS analysis shows that chemical bonding to oxygen across the nanolaminate film is independent of the interface formation conditions. In addition, the GaAs surface treated with (NH4)(2)S shows a decreased band bending and slightly thinner films with respect to NH4OH. (C) 2008 American Institute of Physics.

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页数：3

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