Multilayered Graphene from SiC Films via Pyrolysis in Vacuum

被引：10

作者：

Ogawa, Yasuhiro ^{[1
]}

Nakamura, Atsusi ^{[1
]}

Tanaka, Akira ^{[1
]}

Temmyo, Jiro ^{[1
]}

机构：

[1] Shizuoka Univ, Elect Res Inst, Naka Ku, Hamamatsu 4328011, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 04期

关键词：

CHEMICAL-VAPOR-DEPOSITION; SURFACE DECOMPOSITION; CARBON; SUBSTRATE;

D O I：

10.1143/JJAP.48.04C140

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate multilayered graphene formation from Sic films via pyrolysis in vacuum, where the Sic films with micro-3C and amorphous crystal structures have been grown by hydrogen radical-enhanced chemical vapor deposition. The Raman spectra composed of D, G, and 2D bands indicates multilayered graphene formed by controlling the substrate temperature in the 1250 to 1600 degrees C range and the duration time. We found that criterion parameters of the multilayered graphene such that both the peak intensity ratio of D-band against G-band and full width at half maximum of G-band are mainly dominated by pyrolysis temperature and duration time in vacuum as well as crystallinity of Sic films used. (C) 2009 The Japan Society of Applied Physics

引用

页数：5

共 14 条

[1] Electronic confinement and coherence in patterned epitaxial graphene [J].

Berger, Claire ;

Song, Zhimin ;

Li, Xuebin ;

Wu, Xiaosong ;

Brown, Nate ;

Naud, Cecile ;

Mayou, Didier ;

Li, Tianbo ;

Hass, Joanna ;

Marchenkov, Atexei N. ;

Conrad, Edward H. ;

First, Phillip N. ;

de Heer, Wait A. .

SCIENCE, 2006, 312 (5777) :1191-1196

[2] Raman spectrum of graphene and graphene layers [J].

Ferrari, A. C. ;

Meyer, J. C. ;

Scardaci, V. ;

Casiraghi, C. ;

Lazzeri, M. ;

Mauri, F. ;

Piscanec, S. ;

Jiang, D. ;

Novoselov, K. S. ;

Roth, S. ;

Geim, A. K. .

PHYSICAL REVIEW LETTERS, 2006, 97 (18)

[3] Interpretation of Raman spectra of disordered and amorphous carbon [J].

Ferrari, AC ;

Robertson, J .

PHYSICAL REVIEW B, 2000, 61 (20) :14095-14107

[4] Film properties of nanocrystalline 3C-SiC thin films deposited on glass substrates by hot-wire chemical vapor deposition using CH4 as a carbon source [J].

Komura, Yusuke ;

Tabata, Akimori ;

Narita, Tomoki ;

Kanaya, Masaki ;

Kondo, Akihiro ;

Mizutani, Teruyoshi .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (01) :45-50

[5] Raman spectra of carbon nanowalls grown by plasma-enhanced chemical vapor deposition [J].

Kurita, S ;

Yoshimura, A ;

Kawamoto, H ;

Uchida, T ;

Kojima, K ;

Tachibana, M ;

Molina-Morales, P ;

Nakai, H .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (10)

[6] A formation mechanism of carbon nanotube films on SiC(0001) [J].

Kusunoki, M ;

Suzuki, T ;

Hirayama, T ;

Shibata, N ;

Kaneko, K .

APPLIED PHYSICS LETTERS, 2000, 77 (04) :531-533

[7] Formation of silicon-based thin films prepared by catalytic chemical vapor deposition (Cat-CVD) method [J].

Matsumura, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (6A) :3175-3187

[8] Preparation of silicon-on-insulator substrate on large free-standing carbon nanotube film formation by surface decomposition of SiC film [J].

Nagano, T ;

Ishikawa, Y ;

Shibata, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (4A) :1717-1721

[9] OH radical activation of ZnO growth in remote plasma metalorganic chemical vapor deposition [J].

Nakamura, A ;

Shigemori, S ;

Shimizu, Y ;

Aoki, T ;

Tanaka, A ;

Temmyo, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2003, 42 (7A) :L775-L777

[10] Electric field effect in atomically thin carbon films [J].

Novoselov, KS ;

Geim, AK ;

Morozov, SV ;

Jiang, D ;

Zhang, Y ;

Dubonos, SV ;

Grigorieva, IV ;

Firsov, AA .

SCIENCE, 2004, 306 (5696) :666-669

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