Measurement of trench depth by infrared interferometry

被引:9
作者
van Kessel, T [1 ]
Wickramasinghe, HK [1 ]
机构
[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA
关键词
D O I
10.1364/OL.24.001702
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Measurement and control of high-aspect-ratio structures such as dynamic random-access memory trenches is an important step in the manufacture of modern memory devices. We present a novel technique based on infrared interferometry that has been implemented in manufacturing and is capable of measuring sub-0.25-mu m-wide and 10-mu m-deep trenches nondestructively and with an accuracy of better than 0.1 mu m. (C) 1999 Optical Society of America.
引用
收藏
页码:1702 / 1704
页数:3
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