Study on high-temperature oxidation behaviors of Cr-Si-N films

被引:52
作者
Kim, Jung Wook
Kim, Kwang Ho [1 ]
Lee, D. B.
Moore, J. J.
机构
[1] Pusan Natl Univ, Sch Mat Sci & Engn, Pusan 609735, South Korea
[2] Sungkyunkwan Univ, Sch Adv Mat Engn, Suwon 440746, South Korea
[3] Colorado Sch Mines, ACSEL, Golden, CO 80401 USA
关键词
chromium nitride; coatings; silicon effect; oxidation;
D O I
10.1016/j.surfcoat.2005.10.004
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The high-temperature oxidation behavior of CrN and Cr-Si-N films was investigated. These films were deposited on STS 304 substrates by a hybrid deposition system with arc ion plating (All?) and DC magnetron sputtering method using separate Cr (99.99%) and Si (99.99%) targets in a gaseous mixture of Ar and N(2). Good oxidation resistance of the CrN film was further improved by the incorporation of Si into the CrN film. The oxidation products of the Cr-Si-N film were Cr(2)O(3) and amorphous SiO(2), which were gradually formed by the outward diffusion of Cr, Si, and N as well as the inward diffusion of oxygen. The oxidation kinetics of the specimen showed parabolic behavior, indicating that the diffusion process prevailed during oxidation. The oxidation activation energies for CrN, CrSi(0.10)N, and CrSi(0.15)N coatings are 303.8, 316.4, and 333.9 kJ/mol, respectively. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:6702 / 6705
页数:4
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