Non-Langevin bimolecular recombination in low-mobility materials

被引：91

作者：

Juska, G.

Arlauskas, K.

Stuchlik, J.

Österbacka, R.

机构：

[1] Vilnius Univ, Dept Solid State Elect, LT-10222 Vilnius, Lithuania

[2] Acad Sci Czech Republ, Inst Phys, Prague 16253, Czech Republic

[3] Abo Akad Univ, Dept Phys, SF-20500 Turku, Finland

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2006年 / 352卷 / 9-20期

关键词：

solar cells; photovoltaics; polymers and organics;

D O I：

10.1016/j.jnoncrysol.2005.11.099

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have investigated the bimolecular recombination coefficient (B) of charge carriers in low-mobility materials, in which the Langevin recombination is reduced: inorganic a-Si:H, mu c-Si:H and the organic regioregular poly(3-hexylthiophene)/1-(3-methoxycarbonyl)propyl-1-phenyl-[6,6]-methanofullerene (RR-PHT/PCBM) blend. We have been using a multitude of experimental techniques, namely space-charge-limited current (SCLC), photogenerated charge carrier extraction by linearly increasing voltage (photo-CELIV) and double injection (Dol) current transient techniques for investigation of temperature and electric field dependencies of B. For RR-PHT/PCBM blends, we observed a weak dependence of B on electric field and the most significant reduction of Langevin recombination. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：1167 / 1171

页数：5

共 14 条

[1] Non-langevin recombination in disordered materials with random potential distributions [J].