Indium tin oxide spreading layers for AlGaInP visible LEDs

被引：28

作者：

Morgan, DV ^{[1
]}

Al-Ofi, IM ^{[1
]}

Aliyu, YH ^{[1
]}

机构：

[1] Cardiff Univ, Cardiff Sch Engn, Div Elect, Cardiff, S Glam, Wales

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2000年 / 15卷 / 01期

关键词：

D O I：

10.1088/0268-1242/15/1/312

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper the effectiveness of indium tin oxide (ITO) is assessed as a current spreading layer (CSL) for AlGaInP visible light emitting diodes (LEDs). A range of device structures has been fabricated in order to test the CSL characteristics. As a basis for this comparison test devices have been fabricated both with and without any ITO spreading layers and for comparison with an alternative GaP spreading layer. These measurements confirm that ITO is an effective alternative to the GaP structure with greater potential for applications in low-cost LED arrays.

引用

页码：67 / 72

页数：6

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