Strong carrier localization in GaInN/GaN quantum dots grown by molecular beam epitaxy

被引：14

作者：

Damilano, B ^{[1
]}

Vezian, S ^{[1
]}

Grandjean, N ^{[1
]}

Massies, J ^{[1
]}

机构：

[1] CNRS, Ctr Rech Heteroepitaxie & Applicat, F-06560 Valbonne, France

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 12A期

关键词：

GaInN; quantum dots; photoluminescence; localization; STM; MBE;

D O I：

10.1143/JJAP.38.L1357

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaInN/GaN quantum dots (QDs) are grown by molecular beam epitaxy making use of the Stranski-Krastanov growth regime. III Situ scanning tunneling microscopy (STM) evidences the formation of three-dimensional GaInN islands. An island density as high as 10(12) cm(-2)? is deduced from STM images. It is shown that the room-temperature photoluminescence (PL) of GaInN/GaN QDs can be tuned from 3 eV to 2.5 eV by increasing the GaInN thickness from 10 to 30 A. Photothermal deflection spectroscopy is carried out to measure the absorption of GaInN/GaN QDs. For dots emitting at 2.63 eV, a Stokes shift of 250 meV is found between the maximum PL energy and the absorption edge indicating very strong carrier localization.

引用

页码：L1357 / L1359

页数：3

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